晶体发展杂志 SCIE

期刊简介估计审稿时候： 约2.6个月 约10周

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

该期刊为处置晶体发展尝试和实际方面钻研及其利用（比方在装备中）的任务者供给了通用的参考和出书资本。以下范畴的尝试和实际进献均已颁发：成核和发展实际、份子能源学和传输景象、聚合物和玻璃等粘性介质中的结晶；金属、矿物、半导体、超导体、磁性资料、无机、无机和生物物资的块体或薄膜晶体发展；份子束内涵、化学气相堆积、III-V 和 II-VI 和其余半导体的发展；经由过程物理和化学体例表征单晶；晶体发展的装配、仪器和手艺和污染体例；多层异质布局及其表征，重点是电子资料的晶体发展和内涵方面。该期刊的一大特点是按期收录有关晶体发展相干方面的钻研会和集会论文集。

《Journal Of Crystal Growth》(晶体发展杂志)编辑部通信体例为ELSEVIER SCIENCE BV, PO BOX 211, AMSTERDAM, NETHERLANDS, 1000 AE。若是您须要辅佐投稿或润稿办事，您可以或许征询咱们的客服教员。咱们专一于期刊征询办事十年，熟习颁发政策，可为您供给一对一投稿指点，防止您在投稿时频仍碰鼻，节流您的可贵时候，有用晋升颁发机率，确保SCI检索（检索不了全额退款）。咱们视诺言为生命，多方面确保文章宁静失密，在任何环境下都不会泄漏您的小我信息或稿件内容。